Renesas Electronics - UPA2790GR

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UPA2790GR by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA2790GR
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-30 Code: R-PDSO-G8; Avalanche Energy Rating (EAS): 3.6 mJ;
Datasheet UPA2790GR Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 24 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .053 ohm
Avalanche Energy Rating (EAS): 3.6 mJ
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 6 A
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