Renesas Electronics - UPA2794GR(0)-E1-AY

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UPA2794GR(0)-E1-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA2794GR(0)-E1-AY
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Form: GULL WING;
Datasheet UPA2794GR(0)-E1-AY Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.5 A
Maximum Pulsed Drain Current (IDM): 22 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .033 ohm
Avalanche Energy Rating (EAS): 3.03 mJ
Maximum Feedback Capacitance (Crss): 136 pF
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Peak Reflow Temperature (C): NOT SPECIFIED
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