Renesas Electronics - UPA2826T1S-E2-AT

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UPA2826T1S-E2-AT by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA2826T1S-E2-AT
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 27 A;
Datasheet UPA2826T1S-E2-AT Datasheet
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 27 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Maximum Power Dissipation (Abs): 20 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 27 A
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .0048 ohm
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