Renesas Electronics - UPA603T-T1-A

  1. Home
  2. Renesas Electronics - UPA603T-T1-A
UPA603T-T1-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPA603T-T1-A
Description P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (Abs) (ID): .1 A; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;
Datasheet UPA603T-T1-A Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .3 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .1 A
Maximum Drain Current (Abs) (ID): .1 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRLML2402TRPBF-1 by Infineon Technologies

IRLML2402TRPBF-1

Infineon Technologies

Infineon's IRLML2402TRPBF-1 is a N-channel FET with 1.2A max drain current and 0.54W power dissipation. Ideal for surface mount applications, it operates up to 150°C making it suitable for various electronic devices requiring efficient power management.
SI4925DDY-T1-GE3 by Vishay Intertechnology

SI4925DDY-T1-GE3

Vishay Intertechnology

SI4925DDY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 2 elements and built-in diode. It operates in enhancement mode for switching applications, with max drain current of 8A and min DS breakdown voltage of 30V. This small outline transistor has a max power dissipation of 5W, operating temperature range from -55 to 150°C, and matte tin terminal finish.
FDN304P by Onsemi

FDN304P

Onsemi

FDN304P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 2.4A and 0.052ohm on-resistance, operating in enhancement mode at up to 150°C. With a small outline package style and matte tin finish, it offers efficient performance in compact designs.
NDS356AP by Onsemi

NDS356AP

Onsemi

NDS356AP by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.1A, 0.2 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max Power Dissipation of 0.5W and can withstand temperatures from -55 to 150 °C.
NTJD1155LT1G by Onsemi

NTJD1155LT1G

Onsemi

NTJD1155LT1G by Onsemi is a Small Signal FET with N/P-Channel, ideal for switching applications. It features 8V DS Breakdown Voltage, 1.3A Drain Current, and 0.175ohm On Resistance. Operating from -55 to 150°C, it comes in a small outline package with Gull Wing terminals for surface mount assembly.
FDV305N by Fairchild Semiconductor

FDV305N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3;
2N7002LT1G by Onsemi

2N7002LT1G

Onsemi

2N7002LT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.115A drain current. Ideal for switching applications, it operates in enhancement mode with 7.5 ohm on resistance. With a max power dissipation of 0.3W, this small outline transistor can withstand temperatures up to 150°C.
LND150N3-GP002 by Supertex

LND150N3-GP002

Supertex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): CYLINDRICAL; Maximum Drain-Source On Resistance: 1000 ohm;
NTJD4401NT1G by Onsemi

NTJD4401NT1G

Onsemi

NTJD4401NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. With a max drain current of 0.63A and on resistance of 0.375 ohm, it's ideal for small outline packages in high-temp environments up to 150°C.
2N7000-D74Z by Onsemi

2N7000-D74Z

Onsemi

2N7000-D74Z by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.2A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.4W. The transistor features a built-in diode, cylindrical package style, and metal-oxide semiconductor technology.
BSS123 by Diodes Incorporated

BSS123

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 4 pF; No. of Terminals: 3;
NDS332P by Onsemi

NDS332P

Onsemi

NDS332P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1A max drain current, and 0.3 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET is designed for enhancement mode operation.
2N7002BKS,115 by Nexperia

2N7002BKS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3; Terminal Finish: TIN;
FDY300NZ by Fairchild Semiconductor

FDY300NZ

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Terminal Position: DUAL; JESD-609 Code: e3;
SI9926CDY-T1-GE3 by Vishay Intertechnology

SI9926CDY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI9926CDY-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 8A max drain current, and 0.018 ohm max drain-source resistance. With a small outline package style and operating up to 150°C, it suits various electronic designs.
2N7002K by Taitron Components

2N7002K

Taitron Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 1.8 ohm; Transistor Application: SWITCHING;
2N7002K by Lite-on Semiconductor

2N7002K

Lite-on Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
FDN86265P by Fairchild Semiconductor

FDN86265P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 5 pF;
BSS139IXTSA1 by Infineon Technologies

BSS139IXTSA1

Infineon Technologies

Small Signal Field-Effect Transistors;
2N7002L by Temic Semiconductors

2N7002L

Temic Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .8 A; Terminal Position: DUAL; No. of Elements: 1;