Renesas Electronics - UPA610TA-T1-A

  1. Home
  2. Renesas Electronics - UPA610TA-T1-A
UPA610TA-T1-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPA610TA-T1-A
Description P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Maximum Operating Temperature: 150 Cel;
Datasheet UPA610TA-T1-A Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .3 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .1 A
Maximum Drain Current (Abs) (ID): .1 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FDV301N_NL by Fairchild Semiconductor

FDV301N_NL

Fairchild Semiconductor

FDV301N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.22A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. This PLASTIC/EPOXY transistor comes in a GULL WING package style suitable for surface mount assembly.
BSS138BKAHZGT116 by ROHM

BSS138BKAHZGT116

ROHM

ROHM BSS138BKAHZGT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.4A ID, and 0.81 ohm RDS. Ideal for SWITCHING applications in small outline packages. Operating range from -55 to 150 °C with AEC-Q101 standard compliance.
2N7002PW,115 by NXP Semiconductors

2N7002PW,115

NXP Semiconductors

2N7002PW,115 by NXP Semiconductors is a single N-channel FET with max drain current of 0.31A and power dissipation of 0.83W. Ideal for applications requiring high temperature resistance up to 150°C, it features metal-oxide semiconductor technology and surface mount configuration.
MMBFJ201 by Fairchild Semiconductor

MMBFJ201

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JESD-609 Code: e3; No. of Terminals: 3;
IRLML6402TRPBF-1 by International Rectifier

IRLML6402TRPBF-1

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 4.3 A;
NTJD5121NT1G by Onsemi

NTJD5121NT1G

Onsemi

NTJD5121NT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.295A max drain current, and 1.6 ohm max on resistance. Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C.
BSS138_NL by Fairchild Semiconductor

BSS138_NL

Fairchild Semiconductor

BSS138_NL by Fairchild Semiconductor is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 6 ohm RDS. It is used for switching applications in enhancement mode with a max operating temperature of 150°C.
BSS138W-G by Comchip Technology

BSS138W-G

Comchip Technology

Comchip Technology's BSS138W-G is a N-CHANNEL FET with 50V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 0.2W power dissipation and -55 to 150 °C temperature range.
BSS138L by Fairchild Semiconductor

BSS138L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 5 pF; Maximum Drain Current (ID): .2 A;
MMBFJ201 by National Semiconductor

MMBFJ201

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Package Shape: RECTANGULAR;
ZVP3310FTA by Diodes Incorporated

ZVP3310FTA

Diodes Incorporated

ZVP3310FTA by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. It has a 100V DS Breakdown Voltage, 0.33W Power Dissipation, and 20 ohm On Resistance. With ENHANCEMENT MODE operation, it can handle up to 0.075A Drain Current in a SMALL OUTLINE package.
FDMA1032CZ by Onsemi

FDMA1032CZ

Onsemi

FDMA1032CZ by Onsemi is a Small Signal FET with N-CHANNEL and P-CHANNEL configurations. It features 2 elements with built-in diode for switching applications. With a max drain current of 3.7A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
BSS84 by Infinex

BSS84

Infinex

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Element Material: SILICON; No. of Terminals: 3;
BSS84-7-F by SPC TECHNOLOGY/ MULTICOMP

BSS84-7-F

SPC TECHNOLOGY/ MULTICOMP

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
AO3401A by Alpha & Omega Semiconductor

AO3401A

Alpha & Omega Semiconductor

AO3401A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for various electronic devices.
FDN338P by Onsemi

FDN338P

Onsemi

FDN338P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.6A and 0.115 ohm on-resistance, operating in enhancement mode at up to 150°C. This small outline transistor with GULL WING terminals is designed for high power dissipation (0.5W) in surface mount configurations.
MMBF170LT1 by Onsemi

MMBF170LT1

Onsemi

MMBF170LT1 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. This small outline transistor has a peak reflow temp of 235°C and can withstand temperatures from -55 to 150°C.
2N7002 by Changzhou Galaxy Century Microelectronics

2N7002

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
BSS84LT1G by Onsemi

BSS84LT1G

Onsemi

BSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.225W.
BSS315PH6327XTSA1 by Infineon Technologies

BSS315PH6327XTSA1

Infineon Technologies

BSS315PH6327XTSA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 1.5A ID, and 0.15 ohm RDS(on). It is used in small outline applications requiring a single configuration with built-in diode for enhancement mode operation.