Renesas Electronics - UPA6118C

  1. Home
  2. Renesas Electronics - UPA6118C
UPA6118C by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPA6118C
Description NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .04 A; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
Datasheet UPA6118C Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .04 A
Configuration: COMPLEX
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Surface Mount: NO
No. of Terminals: 18
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 85 V
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T18
No. of Elements: 8
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

PZT2222A by Diotec Semiconductor Ag

PZT2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 600 A; Transistor Application: SWITCHING;
TIP31C by Nte Electronics

TIP31C

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP120G by Onsemi

TIP120G

Onsemi

TIP120G by Onsemi is a NPN power BJT with 65W power dissipation, 1000 min hFE, and 60V max collector-emitter voltage. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
D44H8 by STMicroelectronics

D44H8

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BD139-16 by NXP Semiconductors

BD139-16

NXP Semiconductors

BD139-16 by NXP Semiconductors is a NPN BJT transistor with 80V VCE, 1.5A IC, and 100 hFE. It is ideal for amplifier applications with a max power dissipation of 8W in a through-hole package style. Operating up to 150°C, it offers a transition frequency of 190MHz for high-performance requirements.
TIP127 by General Transistor

TIP127

General Transistor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP42A by Microsemi

TIP42A

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
TIP31C by Semiconductors

TIP31C

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
ULN2064B by Allegro MicroSystems

ULN2064B

Allegro MicroSystems

NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1.75 A; Package Style (Meter): IN-LINE; Additional Features: LOGIC LEVEL COMPATIBLE;
TIP31C by Micro Commercial Components

TIP31C

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;
TIP35C by New England Semiconductor

TIP35C

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Application: SWITCHING;
BCP56-16 by Diotec Semiconductor Ag

BCP56-16

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
TIP41C by Kec

TIP41C

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP31C by Continental Device India

TIP31C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP29C by Microsemi

TIP29C

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON; Qualification: Not Qualified;
BD138 by STMicroelectronics

BD138

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP117 by New Jersey Semiconductor Products

TIP117

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 25 MHz; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V; Transistor Element Material: SILICON;
TIP3055G by Onsemi

TIP3055G

Onsemi

TIP3055G by Onsemi is a NPN BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 5 and fT of 2.5MHz.
TIP41C by Micro Commercial Components

TIP41C

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR;
TIP122 by Continental Device India

TIP122

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;