Renesas Electronics - UPA891TD

  1. Home
  2. Renesas Electronics - UPA891TD
UPA891TD by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPA891TD
Description NPN; Surface Mount: YES; Nominal Transition Frequency (fT): 3500 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 100;
Datasheet UPA891TD Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 3500 MHz
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .21 W
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SD1143-1 by STMicroelectronics

SD1143-1

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
MPSH10 by International Devices

MPSH10

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
2N5109 by Intersil

2N5109

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Terminal Form: WIRE;
NE85634-T1-A by Renesas Electronics

NE85634-T1-A

Renesas Electronics

NE85634-T1-A by Renesas Electronics is a NPN RF BJT transistor with max fT of 6500 MHz. It operates at 150°C, has Vce(max) of 12V, and Ic(max) of 0.1A. Ideal for L Band applications like amplifiers due to its small outline package and flat terminal form.
BFT92W by Siemens

BFT92W

Siemens

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; JESD-30 Code: R-PDSO-G3;
BFP740FESDH6327XTSA1 by Infineon Technologies

BFP740FESDH6327XTSA1

Infineon Technologies

BFP740FESDH6327XTSA1 by Infineon Technologies is an NPN RF BJT with 14 dB power gain, ideal for X Band applications. It features a max operating temperature of 150°C, fT of 47 GHz, and a collector-emitter voltage of 4.2V. Suitable for amplifier circuits requiring high frequency performance in small outline packages.
BFR92A by STMicroelectronics

BFR92A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
2N2369A by Hi-tron Semiconductor

2N2369A

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;
2SC2995 by Toshiba

2SC2995

Toshiba

The Toshiba 2SC2995 is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and fT of 350MHz. Ideal for amplifier applications, it has a max power dissipation of 0.2W and operates at up to 125°C. Its package style is in-line with through-hole terminals.
2N3569 by Thomson-csf Semiconductors

2N3569

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .5 A; JESD-30 Code: O-XBCY-W4; JEDEC-95 Code: TO-105;
A5T3572 by Texas Instruments

A5T3572

Texas Instruments

A5T3572 by Texas Instruments is an NPN BJT transistor with 3 terminals, 0.05 A max collector current, and 1000 MHz transition frequency. Ideal for amplifier applications in the ultra high-frequency band, it has a max power dissipation of 0.5 W and operates up to 150°C.
934059125115 by NXP Semiconductors

934059125115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: SWITCHING;
934067693115 by NXP Semiconductors

934067693115

NXP Semiconductors

RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
934055893115 by NXP Semiconductors

934055893115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;
NE85634-T1-A by Nec Electronics

NE85634-T1-A

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Base Capacitance: 1 pF;
1075MP by Ghz Technology

1075MP

Ghz Technology

NPN; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 6.5 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1; Transistor Element Material: SILICON;
BFR93A by Motorola

BFR93A

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;
MMBR5031LT1 by Freescale Semiconductor

MMBR5031LT1

Freescale Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;
BFR92PE6327HTSA1 by Infineon Technologies

BFR92PE6327HTSA1

Infineon Technologies

BFR92PE6327HTSA1 by Infineon is a NPN RF BJT transistor with max fT of 5000 MHz. It's ideal for L Band applications, featuring a max IC of 0.03 A and hFE of 70. With a package style of Small Outline, it operates up to 150 °C and has a max VCE of 15 V.
KSC1393O by Onsemi

KSC1393O

Onsemi

KSC1393O by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, operates in the very high frequency band up to 700 MHz, and has a max collector-emitter voltage of 30 V. This transistor comes in a cylindrical package with through-hole terminals and can handle a max power dissipation of 0.25 W at an ambient temperature of 150 °C.