Renesas Electronics - UPC1659B

  1. Home
  2. Renesas Electronics - UPC1659B
UPC1659B by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPC1659B
Description RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 10;
Datasheet UPC1659B Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Terminals: 4
Package Equivalence Code: SL,4LEAD,.18SQ
Technology: BIPOLAR
Maximum Operating Temperature: 125 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 27 mA
Minimum Operating Temperature: -55 Cel
Power Supplies (V): 10
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC994ALP5E by Analog Devices

HMC994ALP5E

Analog Devices

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.
ADL8142ACPZN-R7 by Analog Devices

ADL8142ACPZN-R7

Analog Devices

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.
TQP3M9019 by Qorvo

TQP3M9019

Qorvo

TQP3M9019 by Qorvo is a wide band medium power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 50 MHz to 4000 MHz and can handle a max input power of 23 dBm. This component, with its surface mount package, is commonly used in RF and microwave applications.
HMC311LP3E by Analog Devices

HMC311LP3E

Analog Devices

HMC311LP3E by Analog Devices is a GAAS RF amplifier with 12dB gain, operating from 0-6000MHz. It has a max input power of 10dBm and operates on a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount package and 50 ohm characteristic impedance.
RF3827SR by Qorvo

RF3827SR

Qorvo

Qorvo's RF3827SR is a GaAs wide band medium power amplifier with 16 terminals, operating b/w -40°C to 85°C. It requires an 8V power supply and draws a max current of 130mA. Ideal for surface mount applications in RF & microwave systems.
CC2590RGVR by Texas Instruments

CC2590RGVR

Texas Instruments

CC2590RGVR by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for narrowband low-power applications requiring surface mounting in temperatures ranging from -40 to 85°C.
HMC606LC5TR by Analog Devices

HMC606LC5TR

Analog Devices

Analog Devices' HMC606LC5TR is a wide band low power RF amplifier with 9.5 dB gain, operating from 2-18000 MHz. It has a max input power of 15 dBm and operates on a 5V supply with 95 mA current draw. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
HMC326MS8GETR by Hittite Microwave

HMC326MS8GETR

Hittite Microwave

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Minimum Operating Frequency: 3000 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 15 dBm; JESD-609 Code: e3;
HMC1121LP6GE by Analog Devices

HMC1121LP6GE

Analog Devices

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.
SGA3363ZSR by Qorvo

SGA3363ZSR

Qorvo

SGA3363ZSR by Qorvo is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. Operating from 0 to 5500 MHz, it has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact package.
GALI-6F+F55 by Mini-circuits

GALI-6F+F55

Mini-circuits

GALI-6F+F55 by Mini-circuits is a RF & Microwave Amplifier with 4.8V power supply, operating from -45°C to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for applications requiring high-frequency signal amplification in various electronic systems.
MBC13916NT1 by Freescale Semiconductor

MBC13916NT1

Freescale Semiconductor

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Maximum Input Power (CW): 10 dBm; JESD-609 Code: e3; Maximum Operating Frequency: 2500 MHz;
HMC499 by Analog Devices

HMC499

Analog Devices

Analog Devices' HMC499 is a wide band medium power RF amplifier with 12 dB gain and 20 dBm CW input power. Operating from -55°C to 85°C, it covers frequencies from 21 GHz to 32 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
TQP3M9009 by Triquint Semiconductor

TQP3M9009

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 150 mA;
MAAM-011290-TR0500 by M/a-com Technology Solutions

MAAM-011290-TR0500

M/a-com Technology Solutions

WIDE BAND MEDIUM POWER;
AMF-4F-02200230-15-13P by L-3 Narda-miteq

AMF-4F-02200230-15-13P

L-3 Narda-miteq

AMF-4F-02200230-15-13P by L-3 Narda-miteq is a COAXIAL RF amplifier with 58 dB Gain, VSWR of 1.5, operating from 2200 MHz to 2300 MHz. Ideal for narrowband low-power applications in RF & Microwave systems.
HMC372LP3ETR by Hittite Microwave

HMC372LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC429LP4E by Hittite Microwave

HMC429LP4E

Hittite Microwave

NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;
HMC6981LS6 by Hittite Microwave

HMC6981LS6

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 6;
HMC498LC4TR by Analog Devices

HMC498LC4TR

Analog Devices

HMC498LC4TR by Analog Devices is a wide band medium power RF amplifier with 18 dB gain, operating from 17-24 GHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF and microwave applications requiring high performance amplification in a compact ceramic package.