Renesas Electronics - UPD42S4400LGS-A80

  1. Home
  2. Renesas Electronics - UPD42S4400LGS-A80
UPD42S4400LGS-A80 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPD42S4400LGS-A80
Description FAST PAGE DRAM; Minimum Supply Voltage (Vsup): 4.5 V; Maximum Operating Temperature: 70 Cel; Nominal Supply Voltage / Vsup (V): 5; Maximum Access Time: 80 ns; Minimum Operating Temperature: 0 Cel;
Datasheet UPD42S4400LGS-A80 Datasheet
NAME DESCRIPTION
Maximum Access Time: 80 ns
Nominal Supply Voltage / Vsup (V): 5
Maximum Operating Temperature: 70 Cel
Minimum Supply Voltage (Vsup): 4.5 V
Memory IC Type: FAST PAGE DRAM
Minimum Operating Temperature: 0 Cel
Maximum Supply Voltage (Vsup): 5.5 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MT40A1G8SA-062E:ETR by Micron Technology

MT40A1G8SA-062E:ETR

Micron Technology

Micron Technology's MT40A1G8SA-062E:ETR is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in temperatures ranging from 0 to 95°C.
MT46H128M32L2MC-5WT:B by Micron Technology

MT46H128M32L2MC-5WT:B

Micron Technology

Micron Technology's MT46H128M32L2MC-5WT:B is a DDR1 DRAM with 128MX32 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices with limited space and power constraints.
MT40A1G16RC-062EIT:B by Micron Technology

MT40A1G16RC-062EIT:B

Micron Technology

Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
K4S281632O-LI75T by Samsung

K4S281632O-LI75T

Samsung

Samsung's K4S281632O-LI75T is an 8MX16 DRAM with 3.3V supply, operating from -40 to 85°C. Featuring a max clock frequency of 133 MHz, it offers a memory density of 134217728 bits suitable for industrial applications requiring high-speed data processing.
S27KL0642GABHB020 by Cypress Semiconductor

S27KL0642GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON; Package Equivalence Code: BGA24,5X5,40;
TC51V16405CST-60 by Toshiba

TC51V16405CST-60

Toshiba

Toshiba's TC51V16405CST-60 is a 4MX4 EDO DRAM with 16777216-bit memory density. Operating at 3.3V, it offers a max access time of 60ns and supports 4096 refresh cycles. Ideal for commercial applications requiring fast memory access in small outline packages.
MT53E1G32D2FW-046AIT:B by Micron Technology

MT53E1G32D2FW-046AIT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046AIT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features self-refresh capability and common I/O type, suitable for applications requiring high-speed synchronous memory with a thin profile and fine pitch package style.
MT40A2G16SKL-062E:B by Micron Technology

MT40A2G16SKL-062E:B

Micron Technology

Micron Technology's MT40A2G16SKL-062E:B is a DDR4 DRAM with 2GX16 organization, operating at 1600 MHz. It features a thin profile grid array package and operates synchronously with self-refresh capability. Ideal for applications requiring high-speed memory performance in devices like computers and servers.
MT53E2G32D4NQ-046WT:A by Micron Technology

MT53E2G32D4NQ-046WT:A

Micron Technology

Micron Technology's MT53E2G32D4NQ-046WT:A is a LPDDR4 DRAM with 2GX32 organization, 32-bit memory width, and 68719476736-bit memory density. It operates synchronously at temperatures ranging from -25°C to 85°C. Ideal for applications requiring high-speed and low-power memory solutions in compact form factors.
MT53E128M32D2DS-046WT:A by Micron Technology

MT53E128M32D2DS-046WT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046WT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in compact devices like smartphones and tablets.
MT46V16M16P-5BIT:M by Micron Technology

MT46V16M16P-5BIT:M

Micron Technology

Micron Technology's MT46V16M16P-5BIT:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
IS42S16160G-7BLI-TR by Integrated Silicon Solution

IS42S16160G-7BLI-TR

Integrated Silicon Solution

IS42S16160G-7BLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for industrial applications, it features a thin profile grid array package and supports common I/O type with self-refresh capability.
MT48LC32M16A2TG-75:CTR by Micron Technology

MT48LC32M16A2TG-75:CTR

Micron Technology

Micron Technology's MT48LC32M16A2TG-75:CTR is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at 0-70°C. It features 33554432 words, 16-bit memory width, and 536870912 bit memory density. Ideal for applications requiring fast access time and synchronous operation.
M393A2K43CB2-CVF by Samsung

M393A2K43CB2-CVF

Samsung

Samsung's M393A2K43CB2-CVF DDR4 DRAM module features 16GX8 organization, 1.2V supply voltage, and 137.4Gb memory density. Ideal for high-performance computing applications requiring fast data access with dual bank page burst capability in a compact MICROELECTRONIC ASSEMBLY package.
MT41K64M16TW-107AAT:J by Micron Technology

MT41K64M16TW-107AAT:J

Micron Technology

Micron Technology's MT41K64M16TW-107AAT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 1073741824 bits. Ideal for applications requiring high-speed and low-power memory solutions.
MTA16ATF2G64HZ-2G6E1 by Micron Technology

MTA16ATF2G64HZ-2G6E1

Micron Technology

Micron Technology's MTA16ATF2G64HZ-2G6E1 is a DDR DRAM MODULE with 2GX64 organization, 64-bit memory width, and 137.4 Gb memory density. It operates synchronously at 1.2V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact systems.
AS4C4M16SA-6BINTR by Alliance Memory

AS4C4M16SA-6BINTR

Alliance Memory

AS4C4M16SA-6BINTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and thin profile grid array package suitable for various memory-intensive applications.
MT48LC8M16A2P-6A:L by Micron Technology

MT48LC8M16A2P-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.
K4S281632K-UC75 by Samsung

K4S281632K-UC75

Samsung

Samsung's K4S281632K-UC75 is a 8MX16 DRAM with 133 MHz clock frequency, suitable for commercial applications. Features include 3.3V supply voltage, 70°C operating temperature, and 4096 refresh cycles. Ideal for systems requiring high-speed synchronous memory with low power consumption.
M378T5263AZ3-CF7 by Samsung

M378T5263AZ3-CF7

Samsung

Samsung M378T5263AZ3-CF7 DDR DRAM Module features 512MX64 organization, operates at 400 MHz with 1.8V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.