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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | UPD488130LVN-A45 |
| Description | RAMBUS DRAM; No. of Terminals: 32; Power Supplies (V): 3.3; No. of Words: 2097152 words; Memory Width: 8; JESD-609 Code: e0; |
| Datasheet | UPD488130LVN-A45 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Input/Output Type: | COMMON |
| Memory Density: | 16777216 bit |
| Organization: | 2MX8 |
| Output Characteristics: | 3-STATE |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 440 mA |
| Memory IC Type: | RAMBUS DRAM |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |
| Memory Width: | 8 |
| No. of Terminals: | 32 |
| Maximum Clock Frequency (fCLK): | 225 MHz |
| No. of Words: | 2097152 words |
| Qualification: | Not Qualified |
| Package Equivalence Code: | SMSIP32,25 |
| Terminal Position: | SINGLE |
| Technology: | CMOS |
| No. of Words Code: | 2M |
| Nominal Supply Voltage / Vsup (V): | 3.3 |
| Terminal Pitch: | 2.54 mm |
| Power Supplies (V): | 3.3 |
