Renesas Electronics - UPG170TB-E3

  1. Home
  2. Renesas Electronics - UPG170TB-E3
UPG170TB-E3 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPG170TB-E3
Description RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet UPG170TB-E3 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Terminals: 6
Package Equivalence Code: TSSOP6,.08
Technology: GAAS
Maximum Operating Temperature: 80 Cel
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -30 Cel
Power Supplies (V): 3.6
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TGA2237-SM by Qorvo

TGA2237-SM

Qorvo

Qorvo's TGA2237-SM is a wideband high-power RF amplifier with 19 dB gain, operating from 30 MHz to 2500 MHz. It can handle up to 33 dBm CW input power with a VSWR of 10. Ideal for applications requiring robust RF amplification in the RF & Microwave domain.
CMD291 by Qorvo

CMD291

Qorvo

WIDE BAND MEDIUM POWER;
MAX2659ELT/V+ by Maxim Integrated

MAX2659ELT/V+

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;
CC2590RGVRG4 by Texas Instruments

CC2590RGVRG4

Texas Instruments

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.
QPA2612 by Qorvo

QPA2612

Qorvo

Qorvo's QPA2612 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power, VSWR of 4, and is ideal for wideband high-power applications in surface-mount configurations.
MAAM28000-A1G by M/a-com Technology Solutions

MAAM28000-A1G

M/a-com Technology Solutions

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;
HMC564LC4TR-R5 by Analog Devices

HMC564LC4TR-R5

Analog Devices

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.
XF1001-SC-0G0T by Mimix Broadband

XF1001-SC-0G0T

Mimix Broadband

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -40 Cel;
SGL-0363Z by Sirenza Microdevices

SGL-0363Z

Sirenza Microdevices

Sirenza Microdevices' SGL-0363Z is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, handling up to 18 dBm CW input power. Ideal for applications requiring high frequency amplification in RF & microwave systems.
HMC311ST89TR by Hittite Microwave

HMC311ST89TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;
RA07N4047M-501 by Mitsubishi Electric

RA07N4047M-501

Mitsubishi Electric

NARROW BAND HIGH POWER;
HMC478MP86ETR by Analog Devices

HMC478MP86ETR

Analog Devices

Analog Devices' HMC478MP86ETR is a wide band low power RF amplifier with 5V power supply, operating from -40°C to 85°C. This bipolar technology device has 4 terminals and surface mounting feature, making it ideal for RF & microwave applications requiring high performance in a compact package.
SGA3463Z by Qorvo

SGA3463Z

Qorvo

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
CMD318P3 by Qorvo

CMD318P3

Qorvo

WIDE BAND LOW POWER;
BGA427H6327XTSA1 by Infineon Technologies

BGA427H6327XTSA1

Infineon Technologies

BGA427H6327XTSA1 by Infineon Technologies is a RF amplifier with 18.5 dB gain, operating from 100 MHz to 1800 MHz. It has a max input power of -10 dBm and operates in temperatures ranging from -65°C to 150°C. This component is suitable for narrow band medium power applications.
MSA-1105-TR1 by Agilent Technologies

MSA-1105-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 70 mA;
TGA2526 by Qorvo

TGA2526

Qorvo

TGA2526 by Qorvo is a GAAS wide band low power RF amplifier with a gain of 17.5 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 22 dBm. This component is commonly used in RF and microwave applications.
SP9711 by Spectrum Control

SP9711

Spectrum Control

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 1000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;
HMC963LC4TR-R5 by Analog Devices

HMC963LC4TR-R5

Analog Devices

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.
HMC462LP5ETR by Hittite Microwave

HMC462LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;