ROHM - 2SCR372P5T100R

  1. Home
  2. ROHM - 2SCR372P5T100R
2SCR372P5T100R by ROHM

Image shown is a representation only.

Manufacturer ROHM
Manufacturer's Part Number 2SCR372P5T100R
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Collector Current (IC): .7 A; JESD-30 Code: R-PSSO-F3;
Datasheet 2SCR372P5T100R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 220 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .7 A
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Other Names: 2SCR372P5T100RTR
2SCR372P5T100RCT
2SCR372P5T100RDKR
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 180
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 120 V
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT3904,215 by NXP Semiconductors

MMBT3904,215

NXP Semiconductors

NXP Semiconductors' MMBT3904,215 is a NPN BJT transistor with 40V VCE, 0.2A IC, and 300MHz fT. Ideal for switching applications, it has a max operating temp of 150°C and features GULL WING terminals in a SMALL OUTLINE package.
MMBT2222A by STMicroelectronics

MMBT2222A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Siemens

BC817-25

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
BC817-40 by Lite-on Semiconductor

BC817-40

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
BC817DS,115 by Nexperia

BC817DS,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
JANTX2N2222AUB by Defense Logistics Agency

JANTX2N2222AUB

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Qualification: Qualified;
MMBT3904 by Diotec Semiconductor Ag

MMBT3904

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
MMBT3906 by Good-ark Electronics

MMBT3906

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 300 ns;
MMBT3904 by Infineon Technologies

MMBT3904

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .2 A;
2N3906 by Kec

2N3906

Kec

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2907AWT1G by Onsemi

MMBT2907AWT1G

Onsemi

MMBT2907AWT1G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.15W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications, it has a min. DC current gain of 50 and operates at up to 150°C, making it suitable for various electronic circuits.
2N3906 by National Semiconductor

2N3906

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847B by Lite-on Semiconductor

BC847B

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
MMBT2907A by Samsung

MMBT2907A

Samsung

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
MMBT2222ALT3G by Onsemi

MMBT2222ALT3G

Onsemi

MMBT2222ALT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it has a small outline package style and operates up to 150°C. With Gull Wing terminals and matte tin finish, it offers fast turn-on/off times of 35ns/285ns.
2N2905A by Onsemi

2N2905A

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; JEDEC-95 Code: TO-39;
BC556BTF by Fairchild Semiconductor

BC556BTF

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
MMBT2907A by Lite-on Semiconductor

MMBT2907A

Lite-on Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JESD-30 Code: R-PDSO-G3;
BC847C by Unisonic Technologies

BC847C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BC547B by Microsemi

BC547B

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; JEDEC-95 Code: TO-92; JESD-609 Code: e0;