BSM080D12P2C008 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	BSM080D12P2C008
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-XUFM-X8; Maximum Drain Current (ID): 80 A; Package Shape: RECTANGULAR;
Datasheet	BSM080D12P2C008 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	80 A
Maximum Pulsed Drain Current (IDM):	160 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	8
Minimum DS Breakdown Voltage:	1200 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED

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