BSM300D12P2E001 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	BSM300D12P2E001
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 300 A;
Datasheet	BSM300D12P2E001 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	300 A
Maximum Pulsed Drain Current (IDM):	600 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	11
Minimum DS Breakdown Voltage:	1200 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X11
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Case Connection:	ISOLATED
Peak Reflow Temperature (C):	NOT SPECIFIED

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