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| Manufacturer | ROHM |
|---|---|
| Manufacturer's Part Number | BSS84WAHZGT106 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING; |
| Datasheet | BSS84WAHZGT106 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 3 pF |
| Maximum Drain Current (ID): | .21 A |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Reference Standard: | AEC-Q101 |
| Maximum Drain-Source On Resistance: | 6.4 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
