ROHM - EM6K6T2R

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EM6K6T2R by ROHM

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Manufacturer ROHM
Manufacturer's Part Number EM6K6T2R
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
Datasheet EM6K6T2R Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .3 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN COPPER
No. of Terminals: 6
Maximum Power Dissipation (Abs): .15 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.4 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: EM6K6T2RDKR
EM6K6T2RTR
EM6K6T2RCT
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e2
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .3 A
Peak Reflow Temperature (C): 260
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