ROHM - HP8S36TB

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HP8S36TB by ROHM

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Manufacturer ROHM
Manufacturer's Part Number HP8S36TB
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON;
Datasheet HP8S36TB Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 5.3 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 48 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN SOURCE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .0133 ohm
Moisture Sensitivity Level (MSL): 1
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