IMX1T110 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	IMX1T110
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .15 A;
Datasheet	IMX1T110 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	180 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.15 A
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	120
JESD-609 Code:	e1
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.4 V

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