ROHM - RH6G040BGTB1

RH6G040BGTB1 by ROHM

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Manufacturer ROHM
Manufacturer's Part Number RH6G040BGTB1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Case Connection: DRAIN; Maximum Operating Temperature: 150 Cel;
Datasheet RH6G040BGTB1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 380 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 59 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0036 ohm
Avalanche Energy Rating (EAS): 56 mJ
Maximum Feedback Capacitance (Crss): 85 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
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