ROHM - RQ3E180BNTB

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RQ3E180BNTB by ROHM

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Manufacturer ROHM
Manufacturer's Part Number RQ3E180BNTB
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet RQ3E180BNTB Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 23.3 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 18 A
Maximum Pulsed Drain Current (IDM): 72 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .0052 ohm
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