RS1P600BETB1 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	RS1P600BETB1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: FLAT; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 70 A;
Datasheet	RS1P600BETB1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	49 mJ
Other Names:	RS1P600BETB1TR RS1P600BETB1CT RS1P600BETB1DKR
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	17.5 A
Maximum Pulsed Drain Current (IDM):	70 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	5
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-F5
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.0097 ohm

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