ROHM - RS6P060BHTB1

  1. Home
  2. ROHM - RS6P060BHTB1
RS6P060BHTB1 by ROHM

Image shown is a representation only.

Manufacturer ROHM
Manufacturer's Part Number RS6P060BHTB1
Description Power Field-Effect Transistors;
Datasheet RS6P060BHTB1 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSC030P03NS3GXT by Infineon Technologies

BSC030P03NS3GXT

Infineon Technologies

BSC030P03NS3GXT by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 345mJ EAS, and 0.0046 ohm RDS(ON). With ENHANCEMENT MODE operation and -55 to 150 °C temperature range, it offers high performance in a SMALL OUTLINE package.
FDD4141_F085 by Fairchild Semiconductor

FDD4141_F085

Fairchild Semiconductor

FDD4141_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, this MOSFET has 0.0123 ohm Drain-Source On Resistance.
IRF3205ZLPBF by International Rectifier

IRF3205ZLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
CSD18531Q5AT by Texas Instruments

CSD18531Q5AT

Texas Instruments

CSD18531Q5AT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 19A Drain Current, and 0.0058 ohm On Resistance. With an operating range of -55 to 150 °C, it's ideal for power management in various electronic devices.
FDD4685-F085 by Onsemi

FDD4685-F085

Onsemi

FDD4685-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.027 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures up to 175°C.
FDS8949 by Fairchild Semiconductor

FDS8949

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Peak Reflow Temperature (C): 260; Maximum Pulsed Drain Current (IDM): 20 A;
JANTX2N6796 by Omnirel

JANTX2N6796

Omnirel

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; JESD-30 Code: O-MBCY-W3; Terminal Finish: Tin/Lead (Sn/Pb);
2N7002BKV by Nexperia

2N7002BKV

Nexperia

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Reference Standard: AEC-Q101; Qualification: Not Qualified;
VNB35N07-E by STMicroelectronics

VNB35N07-E

STMicroelectronics

STMicroelectronics VNB35N07-E is a N-CHANNEL FET with 60V DS Breakdown Voltage and 35A ID. Ideal for automotive applications, it features 125W Pd, 0.035 ohm RDS(on), and AEC-Q101 compliance.
IRLML2030TRPBF by International Rectifier

IRLML2030TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
BSC060N10NS3G by Infineon Technologies

BSC060N10NS3G

Infineon Technologies

BSC060N10NS3G by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 360A IDM, and 0.006 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. This PLASTIC/EPOXY transistor has a small outline package style and can withstand temperatures up to 150°C.
FDPF10N60NZ by Fairchild Semiconductor

FDPF10N60NZ

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
FDD4685 by Onsemi

FDD4685

Onsemi

FDD4685 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for applications requiring high power dissipation up to 69W. Featuring a max Drain Current of 40A and an Avalanche Energy Rating of 121mJ, it operates in Enhancement Mode for efficient performance in various electronic circuits.
IRLML2244TRPBF by Infineon Technologies

IRLML2244TRPBF

Infineon Technologies

IRLML2244TRPBF by Infineon Technologies is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 18A Max IDM, and 0.054 ohm Max RDS(on). With a small outline package style and matte tin terminal finish, it operates b/w -55 to 150 °C, making it ideal for various power management needs.
FDB44N25TM by Onsemi

FDB44N25TM

Onsemi

FDB44N25TM by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 44A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 176A Pulsed Drain Current, and 307W Power Dissipation in a RECTANGULAR package.
BSP125H6327XTSA1 by Infineon Technologies

BSP125H6327XTSA1

Infineon Technologies

Infineon's BSP125H6327XTSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.48A IDM, and 45 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance. Features include single configuration with built-in diode, gull wing terminals, and small outline package style.
SI7461DP-T1-GE3 by Vishay Intertechnology

SI7461DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7461DP-T1-GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 8.6A Drain Current, and 0.0145 ohm On Resistance. Ideal for power management applications due to its 60A Pulsed Drain Current capability and 125mJ Avalanche Energy Rating in a small outline package.
IRF540NPBF by International Rectifier

IRF540NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
BSS123 by Sipex

BSS123

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Moisture Sensitivity Level (MSL): 1;
DMN6068SE-13 by Diodes Incorporated

DMN6068SE-13

Diodes Incorporated

DMN6068SE-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 20.8A max pulsed drain current, and 0.068 ohm max drain-source resistance. Suitable for enhancement mode operation in small outline packages at up to 150°C operating temperature.