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Manufacturer | ROHM |
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Manufacturer's Part Number | SCT2H12NYTB |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 4 A; |
Datasheet | SCT2H12NYTB Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON CARBIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 4 A |
JEDEC-95 Code: | TO-268AA |
Maximum Pulsed Drain Current (IDM): | 10 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 1700 V |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | 1.5 ohm |