SH8K25GZ0TB1 by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	SH8K25GZ0TB1
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Feedback Capacitance (Crss): 15 pF; Terminal Position: DUAL;
Datasheet	SH8K25GZ0TB1 Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	.48 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	15 pF
Maximum Drain Current (ID):	5.2 A
Maximum Pulsed Drain Current (IDM):	8 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	40 V
Maximum Power Dissipation (Abs):	3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.085 ohm

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