SP8K1FRATB by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	SP8K1FRATB
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE;
Datasheet	SP8K1FRATB Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5 A
Maximum Pulsed Drain Current (IDM):	20 A
Surface Mount:	YES
Terminal Finish:	TIN COPPER
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.082 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	50 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e2
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	5 A
Peak Reflow Temperature (C):	260

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