ROHM - UT6JA3TCR

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UT6JA3TCR by ROHM

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Manufacturer ROHM
Manufacturer's Part Number UT6JA3TCR
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Terminal Position: DUAL; Transistor Application: SWITCHING;
Datasheet UT6JA3TCR Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 4 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5 A
Maximum Pulsed Drain Current (IDM): 12 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .059 ohm
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