UT6MA2TCR by ROHM | Transistors

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Manufacturer	ROHM
Manufacturer's Part Number	UT6MA2TCR
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Maximum Drain Current (ID): 4 A; Terminal Position: DUAL;
Datasheet	UT6MA2TCR Datasheet

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	6.4 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4 A
Maximum Pulsed Drain Current (IDM):	12 A
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.08 ohm

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