Samsung - IRF222

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IRF222 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRF222
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet IRF222 Datasheet
In Stock1,134
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3.5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Maximum Power Dissipation (Abs): 40 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 3.5 A
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