Samsung - IRF231

  1. Home
  2. Samsung - IRF231
IRF231 by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number IRF231
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Drain Current (ID): 9 A; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet IRF231 Datasheet
In Stock1,253
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 9 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Maximum Power Dissipation (Abs): 75 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 9 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,253 $0.903 $1,131.459

Popular Products

Category Top Products

NDT3055 by Onsemi

NDT3055

Onsemi

NDT3055 by Onsemi is a Power FET with 60V DS breakdown voltage, 25A IDM, and 0.1 ohm RDS(on). Ideal for switching applications, it features N-CHANNEL polarity, SINGLE configuration with built-in diode. Operating in enhancement mode at up to 150°C, this MOSFET has GULL WING terminals and is surface mountable.
BSC900N20NS3GATMA1 by Infineon Technologies

BSC900N20NS3GATMA1

Infineon Technologies

BSC900N20NS3GATMA1 by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 200V and can handle a max pulsed drain current of 61A. This transistor is commonly used for switching applications.
FDB44N25TM by Fairchild Semiconductor

FDB44N25TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 307 W; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
IRFR5305TRLPBF by Infineon Technologies

IRFR5305TRLPBF

Infineon Technologies

IRFR5305TRLPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 110A IDM, 280mJ EAS, and 0.065 ohm RDS(on). With a max power dissipation of 110W and operating temperature up to 175°C, it's suitable for high-power electronic systems.
G3R40MT12K by Genesic Semiconductor

G3R40MT12K

Genesic Semiconductor

Power Field-Effect Transistors;
IRFP460PBF by International Rectifier

IRFP460PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Case Connection: DRAIN;
FDS8858CZ by Fairchild Semiconductor

FDS8858CZ

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
IRF7404TRPBF by International Rectifier

IRF7404TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 340 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MRF151G by TE Connectivity

MRF151G

TE Connectivity

TE Connectivity's MRF151G is a N-CHANNEL FET with 40A ID and 500W power dissipation. Ideal for high-power applications, it operates in enhancement mode with a max temp of 150°C.
IRLML6344TRPBF by International Rectifier

IRLML6344TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
RFD14N05LSM9A by Harris Semiconductor

RFD14N05LSM9A

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Qualification: Not Qualified; Maximum Turn Off Time (toff): 100 ns;
IXTK3N250L by Littelfuse

IXTK3N250L

Littelfuse

IXTK3N250L by Littelfuse is a N-CHANNEL FET with 2500V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features 8A IDM, 417W Abs Power Dissipation, and operates in ENHANCEMENT MODE. With a max operating temperature of 150°C and -55°C min, it offers reliable performance in various environments.
BUK9M85-60EX by Nexperia

BUK9M85-60EX

Nexperia

BUK9M85-60EX by Nexperia is a N-channel power FET with 60V DS breakdown voltage and 12.8A max drain current. Ideal for switching applications, it features a built-in diode, 0.085 ohm max on resistance, and 51A pulsed drain current. Suitable for surface mount with Gull Wing terminals in a small outline package style.
FDD8424H_F085 by Onsemi

FDD8424H_F085

Onsemi

Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
NTF2955T1G by Onsemi

NTF2955T1G

Onsemi

NTF2955T1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 10.4A IDM, 225mJ EAS, and 0.185 ohm RDS(on). With ENHANCEMENT MODE operation and DUAL terminal position, it offers efficient power dissipation up to 1.92W in a SMALL OUTLINE package.
NVMFS5C604NLAFT1G by Onsemi

NVMFS5C604NLAFT1G

Onsemi

NVMFS5C604NLAFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
SQ2362ES-T1_GE3 by Vishay Intertechnology

SQ2362ES-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQ2362ES-T1_GE3 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 17A IDM. Ideal for applications requiring high drain current handling, such as automotive power management systems. Features include EAS of 7mJ, -55 to 175 °C operating temp range, and AEC-Q101 compliance.
IRLML0040TRPBF by International Rectifier

IRLML0040TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;
SQ2318AES-T1_GE3 by Vishay Intertechnology

SQ2318AES-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQ2318AES-T1_GE3 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A IDM. Ideal for applications requiring high current handling capabilities, such as power supplies and motor control systems. Features include 8A ID, 0.031ohm RDS(on), and 46pF Crss for efficient performance in various electronic devices.
SQ3427AEEV-T1_GE3 by Vishay Intertechnology

SQ3427AEEV-T1_GE3

Vishay Intertechnology

Power Field-Effect Transistors;