Image shown is a representation only.
| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | IRF9521 |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Transistor Application: SWITCHING; No. of Terminals: 3; |
| Datasheet | IRF9521 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 150 ns |
| Maximum Drain Current (ID): | 6 A |
| Maximum Pulsed Drain Current (IDM): | 24 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 40 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 115 ns |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | 40 W |
| Maximum Drain-Source On Resistance: | .6 ohm |
| Avalanche Energy Rating (EAS): | 380 mJ |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 6 A |
