IRF9Z30 by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	IRF9Z30
Description	P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 74 W; Transistor Element Material: SILICON; JEDEC-95 Code: TO-220AB;
Datasheet	IRF9Z30 Datasheet
In Stock	13,141

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	188 ns
Maximum Drain Current (ID):	18 A
Maximum Pulsed Drain Current (IDM):	60 A
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	74 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	128 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	74 W
Maximum Drain-Source On Resistance:	.14 ohm
Avalanche Energy Rating (EAS):	13 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	50 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	18 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
13,141	-	-

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