Samsung - IRF9Z35

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IRF9Z35 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRF9Z35
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 74 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 15 A;
Datasheet IRF9Z35 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 188 ns
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 50 A
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): 74 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 128 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 74 W
Maximum Drain-Source On Resistance: .21 ohm
Avalanche Energy Rating (EAS): 13 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 15 A
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