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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | IRFIZ14 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 43 W; Maximum Drain-Source On Resistance: .2 ohm; Package Shape: RECTANGULAR; |
| Datasheet | IRFIZ14 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 10 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 43 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 10 A |
| Maximum Drain-Source On Resistance: | .2 ohm |
