Samsung - IRFM220A

IRFM220A by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFM220A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Maximum Pulsed Drain Current (IDM): 9 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRFM220A Datasheet
In Stock319
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.13 A
Maximum Pulsed Drain Current (IDM): 9 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 2.4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .8 ohm
Avalanche Energy Rating (EAS): 77 mJ
JEDEC-95 Code: TO-261AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 1.1 A
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