Samsung - IRFR111

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IRFR111 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFR111
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
Datasheet IRFR111 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 47 ns
Maximum Drain Current (ID): 4.7 A
Maximum Pulsed Drain Current (IDM): 17 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 25 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 42 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 25 W
Maximum Drain-Source On Resistance: .54 ohm
Avalanche Energy Rating (EAS): 13 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 4.4 A
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