Samsung - IRFR220-T1

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IRFR220-T1 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFR220-T1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .8 ohm; Avalanche Energy Rating (EAS): 50 mJ; Maximum Operating Temperature: 150 Cel;
Datasheet IRFR220-T1 Datasheet
In Stock207
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 54 ns
Maximum Drain Current (ID): 4.6 A
Maximum Pulsed Drain Current (IDM): 18 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 53 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 42 W
Maximum Drain-Source On Resistance: .8 ohm
Avalanche Energy Rating (EAS): 50 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
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