IRFR222-T1 by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	IRFR222-T1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Transistor Application: SWITCHING; Qualification: Not Qualified;
Datasheet	IRFR222-T1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	54 ns
Maximum Drain Current (ID):	3.8 A
Maximum Pulsed Drain Current (IDM):	15 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	53 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	42 W
Maximum Drain-Source On Resistance:	1.2 ohm
Avalanche Energy Rating (EAS):	50 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified

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