Samsung - IRFS131

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IRFS131 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFS131
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain-Source On Resistance: .16 ohm; Case Connection: ISOLATED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRFS131 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 9.7 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 80 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .16 ohm
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