Samsung - IRFS350A

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IRFS350A by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFS350A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (Abs) (ID): 12 A;
Datasheet IRFS350A Datasheet
In Stock379
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 11.5 A
Maximum Pulsed Drain Current (IDM): 46 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 92 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .3 ohm
Avalanche Energy Rating (EAS): 605 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 400 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 12 A
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Pricing (USD)

Qty. Unit Price Ext. Price
379 $2.370 $898.230

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