Samsung - IRFS820A

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IRFS820A by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFS820A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Avalanche Energy Rating (EAS): 221 mJ; Maximum Drain Current (ID): 2.1 A;
Datasheet IRFS820A Datasheet
In Stock92
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 221 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.1 A
Maximum Pulsed Drain Current (IDM): 8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 3 ohm
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