Samsung - IRFU9220

IRFU9220 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFU9220
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSIP-T3;
Datasheet IRFU9220 Datasheet
In Stock68,151
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3.6 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 42 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 3.6 A
Maximum Drain-Source On Resistance: 1.5 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
68,151 $0.477 $32,508.027

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