Samsung - IRFWZ14A

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IRFWZ14A by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFWZ14A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; No. of Elements: 1; Case Connection: DRAIN;
Datasheet IRFWZ14A Datasheet
In Stock507
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 86 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 40 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .14 ohm
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