Samsung - IRLIZ34A

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IRLIZ34A by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRLIZ34A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
Datasheet IRLIZ34A Datasheet
In Stock135
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 83 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 30 A
Maximum Drain Current (Abs) (ID): 30 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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