Samsung - IRLR110A

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IRLR110A by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRLR110A
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 22 W; Maximum Drain Current (ID): 4.7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRLR110A Datasheet
In Stock79
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 22 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 4.7 A
Maximum Drain Current (Abs) (ID): 4.7 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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