Samsung - IRLU014

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IRLU014 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRLU014
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Turn On Time (ton): 70 ns; No. of Terminals: 3;
Datasheet IRLU014 Datasheet
In Stock65,190
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 70 ns
Maximum Drain Current (ID): 6.7 A
Maximum Pulsed Drain Current (IDM): 27 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 25 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
Maximum Turn Off Time (toff): 90 ns
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 25 W
Maximum Drain-Source On Resistance: .3 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 7.7 A
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