Samsung - K4B1G0446F-HYK0T

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K4B1G0446F-HYK0T by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4B1G0446F-HYK0T
Description DDR3L DRAM; No. of Terminals: 78; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;
Datasheet K4B1G0446F-HYK0T Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 256MX4
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 160 mA
No. of Terminals: 78
Maximum Clock Frequency (fCLK): 800 MHz
No. of Words: 268435456 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B78
Package Shape: RECTANGULAR
Terminal Form: BALL
Package Code: FBGA
Input/Output Type: COMMON
Memory Density: 1073741824 bit
Sequential Burst Length: 8
Memory IC Type: DDR3L DRAM
Memory Width: 4
Qualification: Not Qualified
Package Equivalence Code: BGA78,9X13,32
Refresh Cycles: 8192
Interleaved Burst Length: 8
Maximum Access Time: .225 ns
No. of Words Code: 256M
Nominal Supply Voltage / Vsup (V): 1.35
Peak Reflow Temperature (C): 260
Terminal Pitch: .8 mm
Power Supplies (V): 1.35
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