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Manufacturer | Samsung |
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Manufacturer's Part Number | K4B4G0846B-HCK0 |
Description | DDR3 DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Organization: 512MX8; Length: 11 mm; |
Datasheet | K4B4G0846B-HCK0 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Organization: | 512MX8 |
Maximum Seated Height: | 1.2 mm |
Access Mode: | MULTI BANK PAGE BURST |
Minimum Supply Voltage (Vsup): | 1.425 V |
Surface Mount: | YES |
No. of Terminals: | 78 |
No. of Words: | 536870912 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
Technology: | CMOS |
JESD-30 Code: | R-PBGA-B78 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | SYNCHRONOUS |
Package Code: | TFBGA |
Width: | 10 mm |
No. of Ports: | 1 |
Memory Density: | 4294967296 bit |
Self Refresh: | YES |
Memory IC Type: | DDR3 DRAM |
Memory Width: | 8 |
No. of Functions: | 1 |
Length: | 11 mm |
No. of Words Code: | 512M |
Nominal Supply Voltage / Vsup (V): | 1.5 |
Additional Features: | AUTO/SELF REFRESH |
Terminal Pitch: | .8 mm |
Maximum Supply Voltage (Vsup): | 1.575 V |