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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4D62323HA-QC55T |
| Description | DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: QFP; Package Shape: RECTANGULAR; Technology: CMOS; |
| Datasheet | K4D62323HA-QC55T Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .06 Amp |
| Organization: | 2MX32 |
| Output Characteristics: | 3-STATE |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 430 mA |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 100 |
| Maximum Clock Frequency (fCLK): | 183 MHz |
| No. of Words: | 2097152 words |
| Terminal Position: | QUAD |
| Package Style (Meter): | FLATPACK |
| Technology: | CMOS |
| JESD-30 Code: | R-PQFP-G100 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 65 Cel |
| Package Code: | QFP |
| Input/Output Type: | COMMON |
| Memory Density: | 67108864 bit |
| Sequential Burst Length: | 2,4,8,FP |
| Memory IC Type: | DDR1 DRAM |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 32 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | TQFP100,.7X.9 |
| Interleaved Burst Length: | 2,4,8 |
| Maximum Access Time: | .75 ns |
| No. of Words Code: | 2M |
| Terminal Pitch: | .5 mm |
| Temperature Grade: | COMMERCIAL |
| Power Supplies (V): | 2.5,3.3 |
