Samsung - K4E170812D-B

  1. Home
  2. Samsung - K4E170812D-B
K4E170812D-B by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number K4E170812D-B
Description DRAMs;
Datasheet K4E170812D-B Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

EDB4432BBBJ-1D-F-R by Micron Technology

EDB4432BBBJ-1D-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F-R is a 128MX32 LPDDR2 DRAM with 134 terminals in a grid array package. Operating at 1.2V, it offers synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications. The very thin profile and fine pitch make it suitable for compact electronic devices requiring fast and efficient data processing.
MT40A256M16LY-062EIT:F by Micron Technology

MT40A256M16LY-062EIT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
MT46H32M16LFBF-5IT:C by Micron Technology

MT46H32M16LFBF-5IT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-5IT:C is a 32MX16 DDR1 DRAM with 536870912-bit memory density. It operates at 200 MHz with a supply voltage of 1.8V, suitable for industrial applications requiring fast data access and low power consumption. The package style is grid array, very thin profile, fine pitch, making it ideal for space-constrained designs.
W972GG6KB25I by Winbond Electronics

W972GG6KB25I

Winbond Electronics

Winbond Electronics' W972GG6KB25I is a 128MX16 DDR2 DRAM with 1.8V supply, operating at 400MHz clock frequency. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact form factors like mobile devices and embedded systems.
MT48LC16M16A2P-6AIT:GTR by Micron Technology

MT48LC16M16A2P-6AIT:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6AIT:GTR is a 16MX16 DRAM with 16777216 words and 268435456 bit memory density. It operates at 3.3V, has a peak reflow temperature of 260°C, and supports industrial temperature grade applications. With synchronous operation and four bank page burst access mode, it is ideal for high-performance computing systems.
M378T5263AZ3-CF7 by Samsung

M378T5263AZ3-CF7

Samsung

Samsung M378T5263AZ3-CF7 DDR DRAM Module features 512MX64 organization, operates at 400 MHz with 1.8V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
S27KL0642GABHB023 by Infineon Technologies

S27KL0642GABHB023

Infineon Technologies

Infineon's S27KL0642GABHB023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.
IS42SM16200D-6BLI by Integrated Silicon Solution

IS42SM16200D-6BLI

Integrated Silicon Solution

IS42SM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 3.3V, has dual bank page burst access mode, and offers a max access time of 5.5 ns. Ideal for industrial applications requiring high-speed and reliable memory performance in a compact grid array package.
MT48LC8M16A2TG-75LIT:G by Micron Technology

MT48LC8M16A2TG-75LIT:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-75LIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 133MHz clock frequency. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast memory access and high data density in compact spaces.
AS4C256M16D3B-12BINTR by Alliance Memory

AS4C256M16D3B-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.
K4S561632J-UC75 by Samsung

K4S561632J-UC75

Samsung

Samsung's K4S561632J-UC75 is a 16MX16 DRAM with 3.3V supply, 133 MHz clock frequency, and 70°C operating temp. Ideal for applications requiring high-speed memory access in commercial-grade devices due to its small form factor, low power consumption, and fast access time of 5.4 ns.
MT47H64M16HR-25EIT by Micron Technology

MT47H64M16HR-25EIT

Micron Technology

Micron Technology's MT47H64M16HR-25EIT is a DDR2 DRAM with 64MX16 organization, operating at 1.55V. It features synchronous operation, self-refresh capability, and a memory density of 1073741824 bits. Ideal for industrial applications requiring fast access times and multi-bank page burst access mode.
MT40A1G8SA-062EAIT:E by Micron Technology

MT40A1G8SA-062EAIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAIT:E is a DDR4 DRAM with 1.2V supply, operating at up to 1600MHz clock frequency. It features 1GX8 organization, 1073741824 words capacity, and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics or industrial systems.
MT16KTF2G64HZ-1G6A1 by Micron Technology

MT16KTF2G64HZ-1G6A1

Micron Technology

Micron Technology's MT16KTF2G64HZ-1G6A1 is a 2GX64 DDR DRAM MODULE with 64-bit memory width and 137.4 Gb density. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed data processing in microelectronic assemblies.
SQR-SD3I-8G1K6SNLB by Advantech

SQR-SD3I-8G1K6SNLB

Advantech

Advantech's SQR-SD3I-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and reliable performance in a wide temperature range from -40 to 85°C.
MT41K128M16HA-15E:D by Silicon360

MT41K128M16HA-15E:D

Silicon360

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST; JESD-30 Code: R-PBGA-B96;
MT40A1G16KD-062EIT:E by Micron Technology

MT40A1G16KD-062EIT:E

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
MT40A2G8AG-062EAAT:F by Micron Technology

MT40A2G8AG-062EAAT:F

Micron Technology

Micron Technology's MT40A2G8AG-062EAAT:F is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a thin profile grid array package, suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
NT5CC256M16CP-DI by Nanya Technology

NT5CC256M16CP-DI

Nanya Technology

NT5CC256M16CP-DI by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices.
MT41K256M8DA-125IT:K by Micron Technology

MT41K256M8DA-125IT:K

Micron Technology

Micron Technology's MT41K256M8DA-125IT:K is a DDR3L DRAM with 256MX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed and efficient memory performance in a compact grid array package.