Samsung - K4H560838E-GCB30

K4H560838E-GCB30 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4H560838E-GCB30
Description DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet K4H560838E-GCB30 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Access Mode: FOUR BANK PAGE BURST
Minimum Supply Voltage (Vsup): 2.3 V
Sub-Category: DRAMs
Surface Mount: YES
Technology: CMOS
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: TBGA
Moisture Sensitivity Level (MSL): 3
Input/Output Type: COMMON
No. of Ports: 1
Self Refresh: YES
Sequential Burst Length: 2,4,8
Memory Width: 8
Qualification: Not Qualified
Package Equivalence Code: BGA60,9X12,40/32
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 240
Terminal Pitch: 1 mm
Maximum Standby Current: .003 Amp
Organization: 32MX8
Output Characteristics: 3-STATE
Maximum Seated Height: 1.2 mm
Maximum Supply Current: 280 mA
Terminal Finish: TIN LEAD
No. of Terminals: 60
Maximum Clock Frequency (fCLK): 166 MHz
No. of Words: 33554432 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE
JESD-30 Code: R-PBGA-B60
Maximum Operating Temperature: 70 Cel
Width: 8 mm
Memory Density: 268435456 bit
Memory IC Type: DDR1 DRAM
JESD-609 Code: e0
Minimum Operating Temperature: 0 Cel
No. of Functions: 1
Refresh Cycles: 8192
Interleaved Burst Length: 2,4,8
Length: 14 mm
Maximum Access Time: .7 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 2.5
Temperature Grade: COMMERCIAL
Maximum Supply Voltage (Vsup): 2.7 V
Power Supplies (V): 2.5
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